リテルヒューズが 1700V、1 オーム SiC MOSFET を発表

Enables high-frequency, high-efficiency power control applications such as electric and hybrid vehicles, datacenters, and auxiliary power supplies

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SiC MOSFET LSIC1MO170E1000

CHICAGO, September 24, 2018 — Littelfuse, Inc. today introduced its first 1700V SiC MOSFET, the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices. An important addition to the Littelfuse SiC MOSFET product offering, the LSIC1MO170E1000 is a powerful addition to the company’s 1200V SiC MOSFETs and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.

High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles, datacenters, and auxiliary power supplies. When compared to similarly-rated Si IGBTs, the LSIC1MO170E1000 SiC MOSFET enables a number of system level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.

Additionally, the Littelfuse SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. Typical applications for the SiC MOSFET LSIC1MO170E1000 include:

  • 太陽光インバーター
  • Switch-mode and uninterruptible power supplies 
  • モータードライブ
  • 高電圧 DC/DC コンバータ
  • 誘導加熱

"This product can improve existing applications, and the Littelfuse application support network can help new design-in projects," said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse. "SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances." 

The new 1700V, 1 Ohm SiC MOSFETs, available in a TO-247-3L package, offer these key benefits:

  • 高周波 / 高効率のアプリケーション向けに最適化済み
  • 極めて低いゲート電荷と出力キャパシタンス
  • 高周波スイッチングを考慮した低ゲート抵抗

販売
LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. サンプルのご請求は、リテルヒューズの世界各地の正規販売代理店を通じてお申し込みください。リテルヒューズの販売代理店一覧は littelfuse.com にてお確かめください。

For More Information:

Additional information is available on the LSIC1MO170E1000E SiC MOSFET product page.

For availability, initial pricing and general technical inquiry, please contact Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse: mketterer@littelfuse.com.

For technical questions, please contact: Power Semi Hotline, powersemisupport@littelfuse.com.  

リテルヒューズ会社案内
1927年創業のリテルヒューズは、電力制御とセンサー技術におけるプラットフォームの発展に貢献する回路保護分野の世界的大手企業です。 ヒューズ、セミコンダクタ、ポリマー、セラミックス、リレーおよびセンサーといった製品を必要とする電子機器、自動車および工業市場向けにサービスを提供しています。また、世界 50 ヵ所以上の拠点に 11,000 名以上の従業員を抱えています。 For more information, please visit Littelfuse.com.